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From: Paul Burridge
Subject: Re: Thermal runaway: please settle this dispute!
References: <firstname.lastname@example.org> <email@example.com> <4KfR9.92768$hK4.firstname.lastname@example.org>
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Date: Sat, 04 Jan 2003 14:55:11 +0000
NNTP-Posting-Date: Sat, 04 Jan 2003 16:23:01 GMT
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On Sat, 04 Jan 2003 14:06:45 GMT, "Lukas Louw" opined
>Thank you for clearing up my semantics, Kevin :)
Well you've both identified the source of confusion for a lot of
people. Many text books use the term "Vbe" at one moment to refer to a
device's internal Vbe - or *barrier height potential* as it is more
properly known as - and at other times to refer to *applied* Vbe from
some external voltage source.
That is why I was particular in using the term *barrier height* in my
original post. It's the fall in *barrier height* between emitter and
base with increased temperature that gives rise to increased current
flow if the *external Vbe* isn't reduced to compensate for it. Hope
this clears things up for anyone left who hasn't spotted this
essential little difference yet.
Now where did I put the asprins?
"What is now proved was once only imagin'd"
- William Blake, 1793
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