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From: "Phil Allison"
References: <firstname.lastname@example.org> <email@example.com> <firstname.lastname@example.org>
Subject: Re: Thermal runaway: please settle this dispute!
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Date: Sun, 5 Jan 2003 11:26:57 +1100
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"chris" wrote in message
> "Phil Allison" wrote in message
> > "chris" wrote in message
> > news:email@example.com...
> > > "Phil Allison" wrote in message
> > news:...
> > > Hi, vbe does fall at 2mv/degC but that has nothing to do with thermal
> > > runaway,
> > ** It has EVERYTHING to do with thermal runaway.
> > which is caused by the increase in collector-base leakage
> > > current,
> > ** Only some geraniums maybe.
> > which subsequently gets multiplied by the devices gain
> > > (hfe).Modern silicon devices dont really suffer much from this
> > > problem, its an issue of yesteryears germainium transistors.
> > ** They do not suffer from serious CB leakage but they sure as hell
> > easily suffer from thermal runaway if the heatsink is not adequate and
> > thermal feedback compensation is not applied properly.
> > ............. Phil
> No Phil, that is just plain old overload,
** No Chris - you have not understood my post or the topic.
>if you remove the signal the
> transistor cools down again.
** No signl involved at all. What are you on about ??
In a runaway condition the forward drive
> is not supplied by the signal but by leakage
** Absolute bullshit - what planet are you from ??????
The drive is supplied by the bias cct.
so if you remove the
> signal the transistor does not cool, hence the term runaway.
** Are you still crapping on about geraniums ??
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