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From: John Woodgate
Subject: Re: Reducing contact resistance for low volt use?
Date: Tue, 7 Jan 2003 23:42:04 +0000
Organization: JMWA Electronics Consultancy
Reply-To: John Woodgate
NNTP-Posting-Date: Wed, 8 Jan 2003 00:34:14 +0000 (UTC)
X-Newsreader: Turnpike (32) Version 4.01 <5Z8C9wtxbnpWyFnyfFzqmVF739>
I read in sci.electronics.design that DarkMatter wrote (in ) about 'Reducing contact resistance for low volt use?', on Tue, 7
> Yet another proof that silver oxides are far more desirable in
>contact faces than copper oxide would be.
Silver doesn't form an oxide in air. That black stuff is silver sulfide.
> Yes. Note that I said this above. That galvanic response is due to
>the porosity of the plating. It takes form in the way of allowing
>oxygen into the area where the two metals interface. Though the
>mechanism is galvanic, the product is copper and silver oxides.
Silver won't oxidise in the presence of copper metal. Alternatively, if
the mechanism were the electrolysis of water, the copper would not
oxidise; any oxide would be reduced by the electrolytic hydrogen.
Regards, John Woodgate, OOO - Own Opinions Only. http://www.jmwa.demon.co.uk
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